H10D 62/371
Inactive supplementary semiconductor regions
Official title: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current}
H10D62/371 (Inactive supplementary semiconductor regions) appears on 2,672 US grants and 2,698 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,672
- Published applications
- 2,698
- Assignees
- 485
- Inventors
- 3,703
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 7 | 0 |
| 1988 | 5 | 0 |
| 1989 | 5 | 0 |
| 1990 | 8 | 0 |
| 1991 | 8 | 0 |
| 1992 | 8 | 0 |
| 1993 | 7 | 0 |
| 1994 | 14 | 0 |
| 1995 | 22 | 0 |
| 1996 | 36 | 0 |
| 1997 | 30 | 0 |
| 1998 | 41 | 0 |
| 1999 | 44 | 0 |
| 2000 | 37 | 0 |
| 2001 | 56 | 16 |
| 2002 | 41 | 47 |
| 2003 | 58 | 60 |
| 2004 | 53 | 60 |
| 2005 | 51 | 82 |
| 2006 | 56 | 107 |
| 2007 | 66 | 94 |
| 2008 | 68 | 129 |
| 2009 | 70 | 98 |
| 2010 | 94 | 101 |
| 2011 | 90 | 114 |
| 2012 | 109 | 118 |
| 2013 | 116 | 129 |
| 2014 | 133 | 126 |
| 2015 | 138 | 155 |
| 2016 | 151 | 183 |
| 2017 | 185 | 171 |
| 2018 | 160 | 148 |
| 2019 | 144 | 132 |
| 2020 | 134 | 130 |
| 2021 | 104 | 91 |
| 2022 | 77 | 97 |
| 2023 | 75 | 99 |
| 2024 | 59 | 89 |
| 2025 | 71 | 79 |
| 2026 | 28 | 43 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- High voltage semiconductor device having Schottky barrier diode25 Aug 2026US 12,720,850 B2SK keyfoundry Inc.
- Co-integration of gate-all-around nanosheet logic device and precision mol resistor11 Aug 2026US 12,707,656 B2International Business Machines Corporation
- Amorphized subfins using backside implantation11 Aug 2026US 12,707,712 B2Intel Corporation
- Embedded semiconductor region for latch-up susceptibility improvement8 Oct 2026US 2026/0314060 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fin loss prevention1 Oct 2026US 2026/0304913 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device and manufacturing method thereof24 Sep 2026US 2026/0293249 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with reduced leakage24 Sep 2026US 2026/0293263 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacturing the same13 Aug 2026US 2026/0239661 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992
- Si-Ge CMOS semiconductor device268US 6,271,551 B1U. S. Philips Corporation · 2001
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Low threshold voltage, high performance junction transistor206US 5,719,422 ASun Microsystems, Inc. · 1998
- Method of forming a transistor192US 5,908,313 AIntel Corporation · 1999