H10D 62/364
Of igfets
Official title: {of IGFETs}
H10D62/364 (Of igfets) appears on 4,612 US grants and 5,026 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,612
- Published applications
- 5,026
- Assignees
- 653
- Inventors
- 6,073
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 10 | 0 |
| 1988 | 6 | 0 |
| 1989 | 8 | 0 |
| 1990 | 14 | 0 |
| 1991 | 10 | 0 |
| 1992 | 11 | 0 |
| 1993 | 14 | 0 |
| 1994 | 28 | 0 |
| 1995 | 33 | 0 |
| 1996 | 55 | 0 |
| 1997 | 45 | 0 |
| 1998 | 69 | 0 |
| 1999 | 64 | 0 |
| 2000 | 56 | 0 |
| 2001 | 76 | 21 |
| 2002 | 58 | 66 |
| 2003 | 79 | 81 |
| 2004 | 66 | 67 |
| 2005 | 67 | 102 |
| 2006 | 73 | 122 |
| 2007 | 77 | 118 |
| 2008 | 79 | 152 |
| 2009 | 84 | 124 |
| 2010 | 115 | 120 |
| 2011 | 110 | 135 |
| 2012 | 126 | 146 |
| 2013 | 147 | 163 |
| 2014 | 170 | 178 |
| 2015 | 190 | 231 |
| 2016 | 233 | 262 |
| 2017 | 280 | 273 |
| 2018 | 239 | 239 |
| 2019 | 259 | 272 |
| 2020 | 270 | 306 |
| 2021 | 244 | 248 |
| 2022 | 231 | 364 |
| 2023 | 206 | 408 |
| 2024 | 243 | 339 |
| 2025 | 301 | 307 |
| 2026 | 134 | 182 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Field effect transistor6 Oct 2026US 12,757,736 B2OOKUMA DIAMOND DEVICE Inc.
- Semiconductor device having an offset source/drain feature and method of fabricating thereof25 Aug 2026US 12,720,720 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structure with low resistance contact25 Aug 2026US 12,720,801 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Embedded semiconductor region for latch-up susceptibility improvement8 Oct 2026US 2026/0314060 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structures with interleaved body contacts and gate contacts1 Oct 2026US 2026/0304873 A1GLOBALFOUNDRIES U. S. Inc.
- Fin loss prevention1 Oct 2026US 2026/0304913 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including gate structure and multiple integrated separation structures24 Sep 2026US 2026/0293208 A1Samsung Electronics Co., Ltd.
- Profile controlof epitaxial structures in semiconductor devices24 Sep 2026US 2026/0293247 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor device and method355US 10,510,871 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Uniformity tuning of variable-height features formed in trenches349US 10,332,963 B1Globalfoundries Inc. · 2019
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992
- Si-Ge CMOS semiconductor device268US 6,271,551 B1U. S. Philips Corporation · 2001