H10D 62/378
Contact regions to the substrate regions
Official title: {Contact regions to the substrate regions}
H10D62/378 (Contact regions to the substrate regions) appears on 1,043 US grants and 998 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,043
- Published applications
- 998
- Assignees
- 287
- Inventors
- 1,712
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 12 | 0 |
| 1995 | 12 | 0 |
| 1996 | 18 | 0 |
| 1997 | 13 | 0 |
| 1998 | 33 | 0 |
| 1999 | 14 | 0 |
| 2000 | 14 | 0 |
| 2001 | 14 | 2 |
| 2002 | 9 | 16 |
| 2003 | 17 | 18 |
| 2004 | 10 | 11 |
| 2005 | 16 | 22 |
| 2006 | 21 | 20 |
| 2007 | 11 | 26 |
| 2008 | 8 | 39 |
| 2009 | 22 | 36 |
| 2010 | 33 | 28 |
| 2011 | 29 | 29 |
| 2012 | 32 | 36 |
| 2013 | 38 | 45 |
| 2014 | 44 | 49 |
| 2015 | 45 | 52 |
| 2016 | 53 | 57 |
| 2017 | 79 | 82 |
| 2018 | 54 | 60 |
| 2019 | 71 | 66 |
| 2020 | 65 | 53 |
| 2021 | 54 | 51 |
| 2022 | 43 | 60 |
| 2023 | 39 | 41 |
| 2024 | 36 | 49 |
| 2025 | 30 | 25 |
| 2026 | 19 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Field effect transistor6 Oct 2026US 12,757,736 B2OOKUMA DIAMOND DEVICE Inc.
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Power semiconductor device comprising a wide bandgap substrate4 Aug 2026US 12,701,776 B2Cambridge Gan Devices Limited
- Transistor structures with interleaved body contacts and gate contacts21 Jul 2026US 12,690,248 B2GLOBALFOUNDRIES U. S. Inc.
- Transistor structures with interleaved body contacts and gate contacts1 Oct 2026US 2026/0304873 A1GLOBALFOUNDRIES U. S. Inc.
- Integrated circuit device and manufacturing method thereof24 Sep 2026US 2026/0293249 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor device and semiconductor device6 Aug 2026US 2026/0231492 A1Renesas Electronics Corporation
- Semiconductor structures and methods of manufacturing semiconductor structures16 Jul 2026US 2026/0206295 A1Semiconductor Components Industries, LLC
- Body contact in soi device and method for forming the same18 Jun 2026US 2026/0173474 A1Globalfoundries Singapore Pte. Ltd.
Most cited
By later US patents
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992
- Multiple well transistor circuits having forward body bias225US 6,218,895 B1Intel Corporation · 2001
- Low threshold voltage, high performance junction transistor206US 5,719,422 ASun Microsystems, Inc. · 1998
- Differential circuits employing forward body bias203US 6,218,892 B1Intel Corporation · 2001
- High frequency ring gate MOSFET161US 6,140,687 AMatsushita Electric Industrial Co., Ltd. · 2000