Body contact in soi device and method for forming the same

An electronic device comprising a plurality of transistor structures, each transistor structure comprising:

• a semiconductor substrate including a buried oxide layer and a semiconductor layer over the buried oxide layer;
• a gate dielectric over the semiconductor layer;
• a gate electrode over the gate dielectric;
• a source region on a first side of the gate electrode, the source region including a first doped layer doped with a first type of impurities and a second doped layer above the first doped layer and doped with a second type of impurities, and a PN junction between the first doped layer and the second doped layer;
• a drain region on a second side of the gate electrode;
• a body of the semiconductor layer between the source region and the drain region;
• and
• a source silicide layer in the source region, the source silicide layer including an edge portion that contacts the first doped layer.

A method of forming a semiconductor device, the method comprising:

• forming a gate dielectric over a semiconductor layer of a substrate comprising a buried oxide layer under the semiconductor layer;
• forming a gate electrode over the gate dielectric;
• forming a source region on a first side of the gate electrode, the source region including a first doped layer doped with a first type of impurities and a second doped layer above the first doped layer and doped with a second type of impurities, and a PN junction between the first doped layer and the second doped layer;
• forming a drain region on a second side of the gate electrode, wherein a body of the semiconductor layer is between the source region and the drain region;
• and
• forming a source silicide layer in the source region, the source silicide layer including an edge portion that contacts the first doped layer.