H10D 62/052
By forming stacked epitaxial layers
Official title: {by forming stacked epitaxial layers}
H10D62/052 (By forming stacked epitaxial layers) appears on 43 US grants and 87 published applications in this corpus.
Search patents in H10D- Granted patents
- 43
- Published applications
- 87
- Assignees
- 36
- Inventors
- 176
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 2 | 2 |
| 2005 | 0 | 2 |
| 2006 | 2 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 1 |
| 2011 | 3 | 3 |
| 2012 | 0 | 0 |
| 2013 | 1 | 1 |
| 2014 | 3 | 3 |
| 2015 | 2 | 4 |
| 2016 | 2 | 3 |
| 2017 | 2 | 2 |
| 2018 | 2 | 4 |
| 2019 | 2 | 1 |
| 2020 | 2 | 6 |
| 2021 | 6 | 4 |
| 2022 | 1 | 2 |
| 2023 | 2 | 11 |
| 2024 | 2 | 4 |
| 2025 | 0 | 14 |
| 2026 | 7 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for aligning backside pattern based on one or more frontside alignment marks of a semiconductor wafer25 Aug 2026US 12,721,184 B2Alpha and Omega Semiconductor International LP
- Silicon carbide semiconductor device19 May 2026US 12,635,177 B2Fuji Electric Co., Ltd.
- Semiconductor device having a field termination structure and a charge balance structure, and method of producing the semiconductor device12 May 2026US 12,628,373 B2Infineon Technologies AG
- Super junction power device with adjustable gate resistance structure and manufacturing method thereof28 Apr 2026US 12,615,810 B2Chongqing Alpha and Omega Semiconductor Limited
- Silicon carbide semiconductor device, inverter circuit using the same, and method for manufacturing silicon carbide semiconductor device21 Apr 2026US 12,610,603 B2Denso Corporation
- Semiconductor device and a method of manufacturing a semiconductor device10 Sep 2026US 2026/0271349 A1Hyundai Motor Company
- Silicon carbide semiconductor device27 Aug 2026US 2026/0255631 A1Fuji Electric Co., Ltd.
- Semiconductor device27 Aug 2026US 2026/0255639 A1Samsung Electronics Co., Ltd.
- Method of producing a semiconductor device semiconductor device having a field termination structure and a charge balance structure20 Aug 2026US 2026/0247657 A1Infineon Technologies AG
- Semiconductor device and method of manufacturing the same13 Aug 2026US 2026/0239684 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Super-junction semiconductor device78US 6,724,042 B2Fuji Electric Co., Ltd. · 2004
- Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone31US 6,803,627 B2Infineon Technologies AG · 2004
- Super-junction semiconductor device and method of manufacturing the same27US 7,002,205 B2Fuji Electric Device Technology Co., Ltd. · 2006
- Super-junction semiconductor device and method of manufacturing the same14US 7,042,046 B2Fuji Electric Device Technology Co., Ltd. · 2006