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US 2026/0271349 A1Published application
Semiconductor device and a method of manufacturing a semiconductor device
AssigneesHyundai Motor Company, Kia Corporation
InventorsNack Yong Joo, Dae Hwan Chun, Jungyeop Hong, Taehyun Kim, Youngkyun Jung, Junghee Park
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Abstract
A semiconductor device includes a substrate, a first p type layer and an n− type epitaxial layer located on the substrate, an n+ type layer and a second p type layer located on the n− type epitaxial layer, a protection layer located on the n+ type layer and the second p type layer, and a gate located on the protection layer and on the second p type layer.
Claims16
A semiconductor device, comprising:
- a substrate;
- a first p type layer and an n− type epitaxial layer located on the substrate;
- an n+ type layer and a second p type layer located on the n− type epitaxial layer;
- a protection layer located on the n+ type layer and the second p type layer;
- and
- a gate located on the protection layer and on the second p type layer.
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A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate;
- forming an n− type epitaxial layer and a first p type layer on the substrate;
- forming n+ type layer and a second p type layer on the n− type epitaxial layer;
- forming a protection layer on the n+ type layer and the second p type layer;
- and
- partially removing the protection layer located on the second p type layer and forming a gate on the second p type layer and on the protection layer.
3 more elements
Dependencies are inferred from the claim text.