Super-junction semiconductor device

A semiconductor device comprising:

• a semiconductor chip having a first major surface and a second major surface opposing the first major surface;
• an active region on a side of the first major surface;
• a layer of a first conductivity type on a side of the second major surface, the layer of the first conductivity type exhibiting relatively low electrical resistance;
• a first main electrode electrically connected to the active region;
• a second main electrode electrically connected to the layer of the first conductivity type;
• a drain drift region between the active region and the layer of the first conductivity type, the drain drift region providing a vertical drift current path in the ON-state of the device and being depleted in the OFF-state of the device;
• and
• a breakdown withstanding region around the drain drift region and between the first major surface and the layer of the first conductivity type,
• wherein the breakdown withstanding region substantially does not provide any current path in the ON-state of the device and is depleted in the OFF-state of the device,
• wherein the breakdown withstanding region comprises an alternating conductivity type layer comprising first regions of the first conductivity type and second regions of a second conductivity type arranged alternately with each other, and
• wherein the breakdown withstanding region further includes a surrounding region of the first conductivity type extending in a thickness direction of the semiconductor chip and round the alternating conductivity type layer.