H10D 62/051
Forming charge compensation regions
Official title: {Forming charge compensation regions, e.g. superjunctions}
H10D62/051 (Forming charge compensation regions) appears on 920 US grants and 1,171 published applications in this corpus.
Search patents in H10D- Granted patents
- 920
- Published applications
- 1,171
- Assignees
- 222
- Inventors
- 1,314
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 7 | 0 |
| 2001 | 7 | 9 |
| 2002 | 10 | 28 |
| 2003 | 31 | 32 |
| 2004 | 31 | 45 |
| 2005 | 18 | 36 |
| 2006 | 32 | 41 |
| 2007 | 30 | 45 |
| 2008 | 32 | 48 |
| 2009 | 24 | 36 |
| 2010 | 37 | 39 |
| 2011 | 50 | 58 |
| 2012 | 31 | 44 |
| 2013 | 47 | 50 |
| 2014 | 65 | 66 |
| 2015 | 56 | 64 |
| 2016 | 64 | 57 |
| 2017 | 48 | 52 |
| 2018 | 47 | 43 |
| 2019 | 44 | 35 |
| 2020 | 38 | 56 |
| 2021 | 32 | 39 |
| 2022 | 26 | 31 |
| 2023 | 26 | 62 |
| 2024 | 27 | 51 |
| 2025 | 31 | 56 |
| 2026 | 27 | 48 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
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- Method for aligning backside pattern based on one or more frontside alignment marks of a semiconductor wafer25 Aug 2026US 12,721,184 B2Alpha and Omega Semiconductor International LP
- Semiconductor device and method of manufacturing the same18 Aug 2026US 12,713,650 B2Renesas Electronics Corporation
- Silicon super junction structures for increased voltage18 Aug 2026US 12,713,663 B2APPLIED Materials.Inc.
- Superjunction device and fabrication method therefor18 Aug 2026US 12,713,664 B2Semiconductor Manufacturing Electronics (Shaoxing) Corporation
- Method for forming a superjunction device and superjunction device1 Oct 2026US 2026/0304852 A1
- Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator1 Oct 2026US 2026/0304858 A1Kabushiki Kaisha Toshiba
- Forming a superjunction device and superjunction device1 Oct 2026US 2026/0304859 A1Infineon Technologies Austria AG
- Superjunction transistor device and method1 Oct 2026US 2026/0304860 A1Infineon Technologies Austria AG
- Metal oxide semiconductor field effect transistors (mosfet) wih bottom p-wells and deep p-wells17 Sep 2026US 2026/0282463 A1The Research Foundation for The State University of New York
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Trenched high breakdown voltage semiconductor device170US 6,040,600 AMitsubishi Denki Kabushiki Kaisha · 2000
- Superjunction LDMOST using an insulator substrate for power integrated circuits169US 6,768,180 B22004