H10D 62/054
By high energy implantations in bulk semiconductor bodies
Official title: {by high energy implantations in bulk semiconductor bodies, e.g. forming pillars}
H10D62/054 (By high energy implantations in bulk semiconductor bodies) appears on 152 US grants and 263 published applications in this corpus.
Search patents in H10D- Granted patents
- 152
- Published applications
- 263
- Assignees
- 83
- Inventors
- 434
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 9 |
| 2003 | 3 | 8 |
| 2004 | 4 | 12 |
| 2005 | 4 | 6 |
| 2006 | 4 | 12 |
| 2007 | 10 | 6 |
| 2008 | 9 | 9 |
| 2009 | 2 | 10 |
| 2010 | 6 | 6 |
| 2011 | 8 | 8 |
| 2012 | 6 | 8 |
| 2013 | 7 | 5 |
| 2014 | 9 | 10 |
| 2015 | 6 | 9 |
| 2016 | 9 | 6 |
| 2017 | 4 | 9 |
| 2018 | 7 | 6 |
| 2019 | 4 | 5 |
| 2020 | 7 | 15 |
| 2021 | 9 | 11 |
| 2022 | 4 | 9 |
| 2023 | 6 | 13 |
| 2024 | 6 | 12 |
| 2025 | 9 | 27 |
| 2026 | 6 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof4 Aug 2026US 12,701,753 B2Fuji Electric Co., Ltd.
- Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator26 May 2026US 12,641,838 B2Kabushiki Kaisha Toshiba
- Semiconductor device, inverter circuit, drive device, vehicle, and elevator5 May 2026US 12,622,046 B2Kabushiki Kaisha Toshiba
- Systems and methods for pillar extension in termination areas of wide band gap super-junction power devices24 Mar 2026US 12,588,254 B2GE Infrastructure Technology LLC
- Semiconductor device and methods for forming the same24 Mar 2026US 12,588,255 B2Vanguard International Semiconductor Corporation
- Method for forming a superjunction device and superjunction device1 Oct 2026US 2026/0304852 A1
- Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator1 Oct 2026US 2026/0304858 A1Kabushiki Kaisha Toshiba
- Forming a superjunction device and superjunction device1 Oct 2026US 2026/0304859 A1Infineon Technologies Austria AG
- Superjunction transistor device and method1 Oct 2026US 2026/0304860 A1Infineon Technologies Austria AG
- Metal oxide semiconductor field effect transistors (mosfet) wih bottom p-wells and deep p-wells17 Sep 2026US 2026/0282463 A1The Research Foundation for The State University of New York
Most cited
By later US patents
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Superjunction LDMOST using an insulator substrate for power integrated circuits169US 6,768,180 B22004
- Method of fabricating a high-voltage transistor96US 6,509,220 B2Power Integrations, Inc. · 2003
- Manufacturing method of semiconductor device84US 6,346,464 B1Kabushiki Kaisha Toshiba · 2002
- Charge balance field effect transistor62US 7,393,749 B2Fairchild Semiconductor Corporation · 2008