Semiconductor device, inverter circuit, drive device, vehicle, and elevator

A semiconductor device comprising:

• a silicon carbide layer including a first face parallel to a first direction and a second direction perpendicular to the first direction and a second face parallel to the first face;
• a trench provided in the silicon carbide layer, extending in the first direction on the first face, the trench repeatedly provided in the second direction at a first period;
• a gate electrode provided in the trench;
• a gate insulating layer provided between the gate electrode and the silicon carbide layer;
• an n-type first silicon carbide region provided in the silicon carbide layer;
• a p-type second silicon carbide region provided in the silicon carbide layer, the p-type second silicon carbide region provided between the n-type first silicon carbide region and the trench, the p-type second silicon carbide region extending in the second direction in a face parallel to the first face, the p-type second silicon carbide region repeatedly provided in the first direction at a second period;
• an n-type third silicon carbide region provided in the silicon carbide layer, the n-type third silicon carbide region provided between the n-type first silicon carbide region and the trench, the n-type third silicon carbide region extending in the second direction in the face parallel to the first face, the n-type third silicon carbide region alternately and repeatedly provided with the p-type second silicon carbide region in the first direction at the second period;
• a p-type fourth silicon carbide region provided in the silicon carbide layer, the p-type fourth silicon carbide region provided between the p-type second silicon carbide region and the first face, the p-type fourth silicon carbide region provided between the n-type third silicon carbide region and the first face, the p-type fourth silicon carbide region provided between one of the trench and another of the trench immediately neighboring the one of the trench;
• an n-type fifth silicon carbide region provided in the silicon carbide layer, the n-type fifth silicon carbide provided between the p-type fourth silicon carbide region and the first face;
• a p-type seventh silicon carbide region provided in the silicon carbide layer, the p-type seventh silicon carbide region provided between the fourth silicon carbide region and the trench, and between the n-type fifth silicon carbide region and the trench, and repeatedly disposed in the first direction at a third period;
• a first electrode provided on a side of the first face with respect to the silicon carbide layer, the first electrode electrically connected to the p-type fourth silicon carbide region and the n-type fifth silicon carbide region;
• and
• a second electrode provided on a side of the second face with respect to the silicon carbide layer,
• wherein the first face is inclined with respect to a (0001) face at an angle equal to or more than 0.1 degrees and equal to or less than 8 degrees in a <11-20> direction, and
• the first direction is along the <11-20> direction, and the second direction is along a <1-100> direction.

A semiconductor device comprising:

• a silicon carbide layer including a first face parallel to a first direction and a second direction perpendicular to the first direction and a second face parallel to the first face;
• a trench provided in the silicon carbide layer, extending in the first direction on the first face, the trench repeatedly provided in the second direction at a first period;
• a gate electrode provided in the trench;
• a gate insulating layer provided between the gate electrode and the silicon carbide layer;
• an n-type first silicon carbide region provided in the silicon carbide layer;
• a p-type second silicon carbide region provided in the silicon carbide layer, the p-type second silicon carbide region provided between the n-type first silicon carbide region and the trench, the p-type second silicon carbide region extending in the second direction in a face parallel to the first face, the p-type second silicon carbide region repeatedly provided in the first direction at a second period;
• an n-type third silicon carbide region provided in the silicon carbide layer, the n-type third silicon carbide region provided between the n-type first silicon carbide region and the trench, the n-type third silicon carbide region extending in the second direction in the face parallel to the first face, the n-type third silicon carbide region alternately and repeatedly provided with the p-type second silicon carbide region in the first direction at the second period;
• a p-type fourth silicon carbide region provided in the silicon carbide layer, the p-type fourth silicon carbide region provided between the p-type second silicon carbide region and the first face, the p-type fourth silicon carbide region provided between the n-type third silicon carbide region and the first face, the p-type fourth silicon carbide region provided between one of the trench and another of the trench immediately neighboring the one of the trench;
• an n-type fifth silicon carbide region provided in the silicon carbide layer, the n-type fifth silicon carbide provided between the p-type fourth silicon carbide region and the first face;
• a first electrode provided on a side of the first face with respect to the silicon carbide layer, the first electrode electrically connected to the p-type fourth silicon carbide region and the n-type fifth silicon carbide region;
• and
• a second electrode provided on a side of the second face with respect to the silicon carbide layer,
• wherein the first face is inclined with respect to a (0001) face at an angle equal to or more than 0.1 degrees and equal to or less than 8 degrees in a <11-20> direction, and
• the first direction is along the <11-20> direction,
• the second direction is along a <1-100> direction, and
• the p-type second silicon carbide region includes a first region and a second region, the second region is provided between the first region and the p-type fourth silicon carbide region, and a p-type impurity concentration of the second region is more than a p-type impurity concentration of the first region.