Manufacturing method of semiconductor device

A semiconductor device manufacturing method of forming at least one of a first and second conductivity-type regions in a semiconductor substrate by selectively irradiating impurity ions onto said semiconductor substrate;

• wherein the impurity distributions in said first and second conductivity-type regions are uniform in the direction of irradiation, and the impurity ion acceleration energy and the area of each region irradiated by said impurity ions are controlled so that the cross-sectional shape and cross-section area of said first and second conductivity-type regions on planes perpendicular to the direction of irradiation may be uniform in the direction of irradiation.

A semiconductor device manufacturing method of forming a first conductivity-type region and a second conductivity-type region on a semiconductor substrate by irradiating impurity ions onto said semiconductor substrate;

• wherein the regions irradiated by impurity ions are restricted by impurity ion intercepting shield masks which are in an inverted imaging relation to each other so that the cross-sectional shape and the cross-section area of the first and second conductivity-type regions on planes perpendicular to the direction of irradiation may be uniform along the direction of irradiation, and the impurity ion acceleration energy is controlled to make the impurity ion distributions in the first and second conductivity-type regions uniform along the direction of irradiation.

A semiconductor device manufacturing method of forming an N+ region by irradiating a neutron beam onto a semiconductor ingot having a P+ region;

• wherein the incident direction of said neutron beam is collimated to make the cross-sectional shape and the cross-section area of said N+ region on planes perpendicular to the direction of irradiation uniform along the direction of irradiation, and the impurity distribution in said N+ region is controlled to be uniform along the direction of irradiation.