Systems and methods for pillar extension in termination areas of wide band gap super-junction power devices
AssigneeGE Infrastructure Technology LLC
InventorsCollin William Hitchcock, Reza Ghandi
Life of this patent
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AssigneeGE Infrastructure Technology LLC
InventorsCollin William Hitchcock, Reza Ghandi
Estimating the term…
A super-junction (SJ) device includes a first epitaxial (epi layer) that forms a first SJ layer of the SJ device and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area and a termination area of the first epi layer includes a first set of SJ pillars that have a particular doping concentration of a first conductivity type and a second set of SJ pillars that have the particular doping concentration of a second conductivity type. A termination area of the second epi layer includes one or more implanted regions that form a junction termination that overlaps with at least one SJ pillar of the first set of SJ pillars or the second set of SJ pillars in the termination area of the first epi layer.
A super-junction (SJ) device, comprising:
A silicon carbide (SiC) super-junction (SJ) device, comprising:
Dependencies are inferred from the claim text.