H10D 62/056
By out-diffusing dopants from applied layers
Official title: {by out-diffusing dopants from applied layers}
H10D62/056 (By out-diffusing dopants from applied layers) appears on 5 US grants and 6 published applications in this corpus.
Search patents in H10D- Granted patents
- 5
- Published applications
- 6
- Assignees
- 5
- Inventors
- 13
- Latest grant
- 26 Jan 2016
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| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 2 |
| 2003 | 2 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 0 | 1 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
By publication year.
Recent patents
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- Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area2 Jan 2014US 2014/0001552 A1Infineon Technologies Austria AG
- Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone29 Jul 2004US 2004/0145013 A1Infineon Technologies AG
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Most cited
By later US patents
- Trench-gate semiconductor devices and their manufacture38US 6,541,817 B1Koninklijke Philips Electronics N. V. · 2003
- Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone31US 6,803,627 B2Infineon Technologies AG · 2004
- Super junction semiconductor device comprising a cell area and an edge area10US 8,866,221 B2Infineon Technologies Austria AG · 2014
- Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity1US 6,670,244 B2Infineon Technologies AG · 2003