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US 2002/0179968 A1Published application
Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components
OwnerFrank Pfirschinventor
Life of this patent
Estimating the term…
Abstract
A reverse-blocking power semiconductor component includes a drift path subdivided into a source-side area and a drain-side area by a region with opposite doping. Provided above this region is a gate. Alternatively, the body zone of the one conduction type is subdivided into a source-side part and a drain-side part by a region of the other conduction type. This region acts as an electron collector. The reverse-blocking power semiconductor component can be incorporated in compensation components, and power transistors. Methods for producing power semiconductor components are also provided.
Claims57
A reverse-blocking power semiconductor component, comprising:
- two electrodes defining an area therebetween;
- a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein;
- and
- a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.
1 more element
A trench power semiconductor component, comprising:
- two electrodes defining an area therebetween;
- a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein;
- and
- a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.
1 more element
An SOI power semiconductor component, comprising:
- two electrodes defining an area therebetween;
- a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein;
- and
- a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.
1 more element
A compensation component, comprising:
- two electrodes defining an area therebetween;
- a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein;
- and
- a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.
1 more element
A method for producing a power semiconductor component, which comprises:
- providing two electrodes defining an area therebetween;
- providing a semiconductor layer in the area between the two electrodes;
- defining a drift path of a first conduction type in the semiconductor layer;
- providing a region in the drift path;
- subdividing the drift path into two areas, the region being of the other conduction type, opposite to the one conduction type;
- providing the region with a gate;
- implanting the region dividing the drift path;
- and
- allowing outward diffusion of dopants of the other conduction type from the region.
6 more elements
A method for producing a power semiconductor component, which comprises:
- providing two electrodes defining an area therebetween;
- providing a semiconductor layer in the area between the two electrodes;
- defining a drift path of a first conduction type in the semiconductor layer;
- providing a region in the drift path;
- subdividing the drift path into two areas, the region being of the other conduction type, opposite to the one conduction type;
- providing the region with a gate;
- and
- producing the region subdividing the drift path by epitaxy.
5 more elements
A reverse-blocking power semiconductor component, comprising:
- a semiconductor body forming a drift path of one conduction type;
- a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body;
- a source metalization;
- a source zone of the one conduction type placed in said body zone and connected to said source metalization;
- and
- a region of the one conduction type being inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone;
- said source metalization being connected electrically only to said source zone.
4 more elements
A power semiconductor component, comprising:
- a first chip and a second chip serially connected to each other, each including a respective semiconductor body forming a drift path of one conduction type, a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body, a source metalization, and a source zone of the one conduction type placed in said body zone and connected to said source metalization, a region of the one conduction type inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone, and said source metalization being connected electrically only to said source zone.
A power transistor, comprising:
- a semiconductor body forming a drift path of one conduction type;
- a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body;
- a source metalization;
- a source zone of the one conduction type placed in said body zone and connected to said source metalization;
- and
- a region of the one conduction type inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone;
- said source metalization being connected electrically only to said source zone.
4 more elements
A method of producing a power semiconductor component, which comprises:
- including a semiconductor body forming a drift path of one conduction type;
- providing a body zone of the other conduction type, opposite to the one conduction type in the semiconductor body;
- providing a source metalization;
- providing a source zone of the one conduction type placed in the body zone and connecting the source zone to the source metalization;
- inlaying a region of the one conduction type in the body zone to define a source-side part and a drain-side part in the body zone;
- short-circuiting the region inlaid in the body zone at least to the drain-side part of the body zone;
- connecting the source metalization electrically only to the source zone;
- and
- producing the region subdividing the body zone is produced by implantation and outward diffusion.
6 more elements
A method of producing a power semiconductor component, which comprises:
- including a semiconductor body forming a drift path of one conduction type;
- providing a body zone of the other conduction type, opposite to the one conduction type in the semiconductor body;
- providing a source metalization;
- providing a source zone of the one conduction type placed in the body zone and connecting the source zone to the source metalization;
- inlaying a region of the one conduction type in the body zone to define a source-side part and a drain-side part in the body zone;
- short-circuiting the region inlaid in the body zone at least to the drain-side part of the body zone;
- connecting the source metalization electrically only to the source zone;
- and
- producing the region that subdivides the body zone by epitaxy.
6 more elements
Dependencies are inferred from the claim text.