Simplified charge balance in a semiconductor device

A method of forming a charge balance region in an active semiconductor device, the method comprising:

• forming an epitaxial region comprising material of a first conductivity type on an upper surface of a substrate of the semiconductor device, the epitaxial region including charge carriers of a first charge type;
• forming a plurality of recessed features at least partially through the epitaxial region;
• forming an insulating layer on at least one of a bottom and sidewalls of each of at least a subset of the recessed features;
• depositing a film on at least a portion of the insulating layer on at least one of the bottom and sidewalls of each of at least the subset of the recessed features using atomic layer deposition, the film having a net static charge of a second charge type associated therewith, the second charge type being opposite in polarity to the first charge type;
• and
• performing thermal processing in such a manner that at least a portion of the charge carriers of the first charge type in the epitaxial region migrate towards the deposited film to thereby form the charge balance region in the epitaxial region.

A semiconductor device, comprising:

• a substrate;
• an epitaxial region formed on a surface of the substrate, the epitaxial region including intrinsic charge carriers of a first charge type;
• a plurality of recessed features formed at least partially through the epitaxial region, at least one of a bottom and sidewalls of each of at least a subset of the plurality of recessed features having deposited thereon, using atomic layer deposition, a dielectric film comprising material having a net static charge of the first charge type;
• and
• a charge balance region formed in the epitaxial region, the charge balance region comprising a first region including charge carriers of a second charge type that migrated from the epitaxial region towards the dielectric film during thermal processing of the semiconductor device, and a second region of the first charge type comprising the intrinsic charge carriers of the first charge type in the epitaxial region, the second charge type being opposite in polarity to the first charge type.

A method of forming a charge balance region in an active semiconductor device, the method comprising:

• forming an epitaxial region on a surface of a substrate of the semiconductor device, the epitaxial region including charge carriers of a first charge type;
• forming a plurality of recessed features at least partially through the epitaxial region;
• depositing a film on at least one of a bottom and sidewalls of each of at least a subset of the recessed features using atomic layer deposition, the film having a net static charge of a second charge type associated therewith, the second charge type being opposite in polarity to the first charge type;
• and
• performing thermal processing in such a manner that at least a portion of the charge carriers of the first charge type in the epitaxial region migrate towards the deposited film to thereby form the charge balance region in the epitaxial region.

A method of forming a charge balance region in an active semiconductor device, the method comprising:

• forming an epitaxial region on a substrate of the semiconductor device;
• forming a plurality of recessed features at least partially through the epitaxial region;
• depositing a film on at least one of a bottom and sidewalls of each of at least a subset of the recessed features using atomic layer deposition;
• and
• performing thermal processing such that at least a portion of the film deposited on each of at least one of the bottom and sidewalls of the recessed features forms a first region in the epitaxial region having a charge that is opposite in polarity to an intrinsic charge of the epitaxial region, the first region, in conjunction with a portion of the epitaxial region proximate the first region, forming the charge balance region.

A semiconductor device, comprising:

• a substrate;
• an epitaxial region of a first conductivity type formed on a surface of the substrate;
• a plurality of recessed features formed at least partially through the epitaxial region, at least one of a bottom and sidewalls of each of at least a subset of the plurality of recessed features having deposited thereon, using atomic layer deposition, boron trioxide;
• and
• a first region of a second conductivity type formed in the epitaxial region proximate the recessed features, the first region including boron from the boron trioxide deposited on at least one of the bottom and sidewalls of at least the subset of the recessed features that has diffused into the epitaxial region during thermal processing of the semiconductor device, said first region, in conjunction with the epitaxial region, forming a charge balance region in the semiconductor device.