Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone
AssigneeInfineon Technologies AG
InventorFrank Pfirsch
Life of this patent
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Abstract
A reverse-blocking power semiconductor component includes a drift path subdivided into a source-side area and a drain-side area by a region with opposite doping. Provided above this region is a gate. Alternatively, the body zone of the one conduction type is subdivided into a source-side part and a drain-side part by a region of the other conduction type. This region acts as an electron collector. The reverse-blocking power semiconductor component can be incorporated in compensation components, and power transistors. Methods for producing power semiconductor components are also provided.
Claims18
A reverse-blocking power semiconductor component, comprising:
- a semiconductor body forming a drift path of one conduction type;
- a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body;
- a source metallization;
- a source zone of the one conduction type placed in said body zone and connected to said source metallization;
- and
- a region of the one conduction type being inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone;
- said source metallization being connected electrically only to said source zone.
Dependencies are inferred from the claim text.