Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes: a drift layer including p-type columns and n-type columns alternately and repeatedly arranged; a base region provided on a top surface side of the drift layer; a main region provided on a top surface side of the base region; and an insulated gate electrode structure provided in contact with the base region and the main region, wherein a distribution of an impurity concentration of one of the p-type columns and the n-type columns in a depth direction is constant, and an impurity concentration of another one of the p-type columns and the n-type columns at each of an upper end and a lower end in the depth direction is lower than an average concentration of the other one in the depth direction, and the other one of the p-type columns and the n-type columns has a peak concentration between the upper end and the lower end in the depth direction.

Dependencies are inferred from the claim text.