H10D 30/796
Having memorised stress for introducing strain in the channel regions
Official title: {having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates}
H10D30/796 (Having memorised stress for introducing strain in the channel regions) appears on 318 US grants and 359 published applications in this corpus.
Search patents in H10D- Granted patents
- 318
- Published applications
- 359
- Assignees
- 60
- Inventors
- 606
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 0 | 5 |
| 2006 | 1 | 0 |
| 2007 | 3 | 3 |
| 2008 | 4 | 5 |
| 2009 | 4 | 21 |
| 2010 | 9 | 14 |
| 2011 | 12 | 18 |
| 2012 | 15 | 29 |
| 2013 | 15 | 28 |
| 2014 | 39 | 22 |
| 2015 | 25 | 45 |
| 2016 | 47 | 40 |
| 2017 | 40 | 29 |
| 2018 | 25 | 16 |
| 2019 | 17 | 15 |
| 2020 | 13 | 12 |
| 2021 | 16 | 9 |
| 2022 | 6 | 15 |
| 2023 | 7 | 9 |
| 2024 | 5 | 5 |
| 2025 | 11 | 11 |
| 2026 | 4 | 7 |
By publication year. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006
- Semiconductor device and fabricating method thereof101US 7,741,138 B2Dongbu HiTek Co., Ltd. · 2010
- Strained-semiconductor-on-insulator device structures with elevated source/drain regions76US 7,420,201 B2AmberWave Systems Corporation · 2008
- Fabrication of vertical field effect transistor structure with strained channels39US 9,755,073 B1International Business Machines Corporation · 2017