N-type metal oxide semiconductor transistor and method for fabricating the same

An n-type metal oxide semiconductor (NMOS) transistor, comprising:

• a gate structure disposed on a substrate;
• two source/drain regions disposed in the substrate and respectively located at two sides of the gate structure, wherein at least one of the source/drain regions is formed with a dislocation;
• two amorphous portions respectively disposed in the two source/drain regions;
• and
• a silicide disposed on the two source/drain regions, wherein at least one portion of the silicide overlaps the two amorphous portions, a bottom of the silicide is lower than a bottom of each of the two amorphous portions, at least a portion of the dislocation is located in the silicide, and a depth of the dislocation in the substrate is deeper than a depth of the silicide in the substrate.