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US 12,446,267 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSe Min Yang, Byung Jae Kang, Jong Keum Lee, Hee Sung Lee
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, device isolation films defining an active region in the substrate, the active region defined in the substrate by the device isolation films, a gate pattern formed in the active region, and source/drain regions on both sides of the gate pattern, in the active region, the source/drain regions include first parts, which are doped with carbon monoxide (CO) ions and are recrystallized.
Claims20
A semiconductor device comprising:
- a substrate;
- device isolation films defining an active region in the substrate;
- a gate pattern in the active region;
- and
- source/drain regions on both sides of the gate pattern, in the active region,
- wherein the source/drain regions include first parts, which comprise carbon monoxide (CO) ions, and
- wherein the source/drain regions further include second parts on top of the first parts, and the second parts are doped with a different material than CO.
4 more elements
A semiconductor device comprising:
- a substrate including a cell region and a peripheral region, which is defined around the cell region;
- a bitline structure including a cell conductive line and a cell line capping film, which is on the cell conductive line, on the substrate;
- a cell gate electrode in the substrate in the cell region, the cell gate electrode intersecting the cell conductive line;
- and
- a peripheral gate pattern on an active region of the peripheral region;
- and source/drain regions on both sides of the gate pattern, in the active region of the peripheral region,
- wherein the source/drain regions include first parts, which comprise carbon monoxide (CO) ions, and
- wherein the source/drain regions further include second parts on top of the first parts, and the second parts are doped with a different material than CO.
5 more elements
A semiconductor device comprising:
- an active pattern extending in a first direction on a substrate;
- gate structures including gate electrodes, which extend in a second direction different from the first direction, on the active pattern;
- and
- source/drain regions between the gate electrodes, on top of the active pattern,
- wherein the source/drain regions include first parts, which comprise carbon monoxide (CO) ions.
2 more elements
Dependencies are inferred from the claim text.