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US 7,420,201 B2Granted
Strained-semiconductor-on-insulator device structures with elevated source/drain regions
AssigneeAmberWave Systems Corporation
InventorsThomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald
Life of this patent
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Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Claims25
A structure comprising:
- a semiconductor substrate having a dielectric layer disposed thereon and in contact therewith;
- a strained semiconductor layer disposed in contact with the dielectric layer, such that the dielectric layer is disposed between the strained semiconductor layer and the substrate;
- and
- a transistor including
- a gate disposed above the strained semiconductor layer, the gate comprising at least one of a doped semiconductor, a metal, or a metallic compound,
- a source region disposed proximate the gate and above the dielectric layer,
- a drain region disposed proximate the gate and above the dielectric layer, and
- a contact layer portion comprising a metal-semiconductor alloy disposed over a second semiconductor layer comprising germanium, the contact layer portion being disposed over at least one of the source and the drain regions.
5 more elements
A structure comprising:
- a semiconductor substrate having a dielectric layer disposed thereon and in contact therewith;
- a strained semiconductor layer disposed in contact with the dielectric layer, such that the dielectric layer is disposed between the strained semiconductor layer and the substrate;
- and
- a transistor including
- a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound,
- a source region disposed proximate the gate and above the dielectric layer,
- a drain region disposed proximate the gate and above the dielectric layer, and
- a contact layer portion disposed over at least one of the source and the drain regions,
- wherein the contact layer portion comprises a metal-semiconductor alloy comprising germanium, the at least one of the source and drain regions comprises a first semiconducting material composition, the metal-semiconductor alloy comprises a second semiconducting material composition, and the first semiconducting material composition is different from the second semiconducting material composition.
6 more elements
A structure comprising:
- a semiconductor substrate having a dielectric layer disposed thereon and in contact therewith;
- a strained semiconductor layer disposed in contact with the dielectric layer, such that the dielectric layer is disposed between the strained semiconductor layer and the substrate;
- and
- a transistor including
- a gate disposed above the strained semiconductor layer, the gate comprising at least one of a doped semiconductor, a metal, or a metallic compound,
- a source region disposed proximate the gate and above the dielectric layer,
- a drain region disposed proximate the gate and above the dielectric layer, and
- a contact layer portion comprising a metal-semiconductor alloy disposed over a second semiconductor layer, the contact layer portion being disposed over at least one of the source and the drain regions,
- wherein at least one of the source and drain regions includes a recess, and a portion of the second semiconductor layer is deposited within the recess.
6 more elements
A structure comprising:
- a semiconductor substrate having a dielectric layer disposed thereon and in contact therewith;
- a strained semiconductor layer disposed in contact with the dielectric layer, such that the dielectric layer is disposed between the strained semiconductor layer and the substrate;
- and
- a transistor including
- a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound,
- a source region disposed proximate the gate and above the dielectric layer,
- a drain region disposed proximate the gate and above the dielectric layer, and
- a contact layer portion comprising a metal-semiconductor alloy disposed over at least one of the source and the drain regions,
- wherein the at least one of the source and drain regions comprises a first semiconducting material composition comprising silicon, the metal-semiconductor alloy comprises a second semiconducting material composition comprising germanium, and the first semiconducting material composition is different from the second semiconducting material composition.
6 more elements
A structure comprising:
- a semiconductor substrate having a dielectric layer disposed thereon and in contact therewith;
- a strained semiconductor layer disposed in contact with the dielectric layer, such that the dielectric layer is disposed between the strained semiconductor layer and the substrate;
- and
- a transistor including
- a gate disposed above the strained semiconductor layer, the gate comprising at least one of a doped semiconductor, a metal, or a metallic compound,
- a source region disposed proximate the gate and above the dielectric layer,
- a drain region disposed proximate the gate and above the dielectric layer,
- a contact layer portion comprising a metal-semiconductor alloy disposed over a second semiconductor layer, the contact layer portion being disposed over at least one of the source and the drain regions, and
- a gate dielectric layer disposed beneath the gate and disposed over and in contact with the strained semiconductor layer,
- wherein a distance between an interface between the gate dielectric layer and the strained semiconductor layer and an interface between the substrate and the dielectric layer is less than a distance between an interface between the contact layer portion and the second semiconductor layer and an interface between the substrate and the dielectric layer.
7 more elements
Dependencies are inferred from the claim text.