Nanosheet FET with controlled overlay mark
AssigneeInternational Business Machines Corporation
InventorsMin Gyu Sung, Susan Ng Emans, Tao Li, Ruilong Xie, Anton Tokranov
Life of this patent
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Abstract
A semiconductor device includes a nanosheet field effect transistor (FET), and an overlay mark adjacent to the nanosheet FET. The overlay mark includes a middle section, a first vertical spacer segment adjacent to a first end of the overlay mark, and a second vertical spacer segment adjacent to a second end of the overlay mark. The first vertical spacer segment and the second vertical spacer segment are isolated from direct contact with the middle section by a shallow trench isolation (STI).
Claims20
A semiconductor device comprising:
- a nanosheet field effect transistor (FET);
- and
- an overlay mark adjacent to the nanosheet FET, wherein the overlay mark comprises:
- a middle section;
- a first vertical spacer segment adjacent to a first end of the overlay mark;
- and
- a second vertical spacer segment adjacent to a second end of the overlay mark, wherein the first vertical spacer segment and the second vertical spacer segment are isolated form direct contact with the middle section by a shallow trench isolation (STI).
A semiconductor device, the semiconductor device comprising:
- a nanosheet field effect transistor (FET);
- and
- an overlay mark adjacent to the nanosheet FET, wherein the overlay mark comprises:
- a middle section;
- a first spacer segment vertically extended over sidewalls of the middle section on a first end;
- and
- a second spacer segment vertically extended over sidewalls of the middle section on a second end.
A method of fabrication of a semiconductor device comprising:
- forming a nanosheet field effect transistor (FET);
- and
- forming an overlay mark adjacent to the nanosheet FET, wherein forming the overlay mark comprises:
- forming a middle section;
- forming a first vertical spacer segment adjacent to a first end of the overlay mark;
- and
- forming a second vertical spacer segment adjacent to a second end of the overlay mark;
- and
- isolating the first vertical spacer segment and the second vertical spacer segment from the middle section by a shallow trench isolation (STI).
Dependencies are inferred from the claim text.