Semiconductor device and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorYong-Soo Cho
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Abstract
A semiconductor device and fabricating method thereof are disclosed, by which channel mobility is enhanced and by which effect of flicker noise can be minimized. Embodiments relate to a method of fabricating a semiconductor device which includes forming a first epi-layer over a substrate, forming a second epi-layer over the first epi-layer, forming a gate electrode over the second epi-layer, forming a spacer over both sides of the gate electrode, etching an area adjacent both sides of the spacer to a depth of the substrate, forming an LDD region in a region under the spacer, and forming a third epi-layer for a source/drain region over the etched area adjacent both of the sides of the spacer.
Claims16
A method comprising:
- forming a first epi-layer over a substrate;
- forming a second epi-layer over the first epi-layer;
- forming a gate electrode over the second epi-layer;
- forming a spacer over both sides of the gate electrode;
- etching an area adjacent both sides of the spacer to a depth of the substrate;
- ion implanting an LDD region in a region under the spacer after said etching;
- and
- forming a third epi-layer for a source/drain region over the etched area adjacent both of the sides of the spacer.
Dependencies are inferred from the claim text.