H10D 30/794
Comprising conductive materials
Official title: {comprising conductive materials, e.g. silicided source, drain or gate electrodes}
H10D30/794 (Comprising conductive materials) appears on 554 US grants and 684 published applications in this corpus.
Search patents in H10D- Granted patents
- 554
- Published applications
- 684
- Assignees
- 108
- Inventors
- 1,082
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 3 | 1 |
| 2002 | 0 | 2 |
| 2003 | 2 | 0 |
| 2004 | 0 | 4 |
| 2005 | 5 | 18 |
| 2006 | 7 | 9 |
| 2007 | 4 | 22 |
| 2008 | 13 | 39 |
| 2009 | 11 | 34 |
| 2010 | 22 | 13 |
| 2011 | 26 | 34 |
| 2012 | 20 | 30 |
| 2013 | 37 | 43 |
| 2014 | 44 | 42 |
| 2015 | 34 | 36 |
| 2016 | 47 | 54 |
| 2017 | 46 | 36 |
| 2018 | 38 | 32 |
| 2019 | 27 | 33 |
| 2020 | 33 | 39 |
| 2021 | 21 | 28 |
| 2022 | 27 | 32 |
| 2023 | 25 | 41 |
| 2024 | 26 | 19 |
| 2025 | 23 | 27 |
| 2026 | 12 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- 3D source and drain contacts tuned for vertically stacked PMOS and NMOS22 Sep 2026US 12,745,428 B2Intel Corporation
- 3D source and drain contacts tuned for PMOS and NMOS1 Sep 2026US 12,727,205 B2Intel Corporation
- Heterogeneous metal line compositions for advanced integrated circuit structure fabrication11 Aug 2026US 12,707,697 B2Intel Corporation
- Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices14 Jul 2026US 12,684,823 B2Samsung Electronics Co., Ltd.
- Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process30 Jun 2026US 12,672,319 B2Sony Group Corporation
- Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices1 Oct 2026US 2026/0304848 A1Samsung Electronics Co., Ltd.
- Semiconductor structure including gate electrode doped with stressor element and method for manufacturing the same10 Sep 2026US 2026/0271390 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate-all-around integrated circuit structures having vertically discrete source or drain structures2 Jul 2026US 2026/0190404 A1Intel Corporation
- Semiconductor device and method of manufacturing thereof25 Jun 2026US 2026/0181990 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication of gate-all-around integrated circuit structures having gate dielectrics with differentiated transition layer thickness25 Jun 2026US 2026/0182013 A1Intel Corporation
Most cited
By later US patents
- Structure and method for fabricating self-aligned metal contacts527US 7,981,751 B2International Business Machines Corporation · 2011
- Gate structure for semiconductor device527US 8,847,293 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Silicide formation and associated devices369US 8,686,516 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering250US 6,281,532 B1Intel Corporation · 2001
- FinFET device and method of manufacturing same194US 8,828,823 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014