FinFET device and method of manufacturing same

A method of forming a semiconductor device comprising:

• forming first and second fins over a substrate;
• depositing a dielectric layer over a central portion of the first and second fins;
• depositing a work function metal over the dielectric layer and over the first and second fins;
• depositing a strained material over the work function metal and interposed between the first and second fins;
• and
• depositing a signal metal over the work function metal and over the strained material, the signal metal traversing the first and second fins.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a fin structure including one or more fins over the substrate, each of the one or more fins including first and second sidewalls;
• depositing an insulation material on the substrate and the fin structure, the insulation material substantially filling a region between each of the one or more fins;
• removing a portion of the insulation material from the region between each of the one or more fins such that a portion of the first and second sidewalls of each of the one or more fins is exposed;
• forming a dielectric layer over a central portion of each of the one or more fins;
• forming a work function metal over the dielectric layer and disposed in the region between each of the one or more fins;
• forming a strained material on the work function metal, the strained material being disposed in the region between each of the one or more fins;
• and
• etching back the strained material in the region between each of the one or more fins.