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US 6,281,532 B1Granted
Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering
AssigneeIntel Corporation
InventorsBrian S. Doyle, Brian Roberds, Jin Lee
Life of this patent
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Abstract
A method of modifying the mobility of a transistor. First, a transistor having a gate is formed. A substance is then implanted in the gate. The transistor is annealed such that the implanted substance forms at least one void in the transistor's gate.
Claims19
A method of modifying the carrier mobility of a transistor, comprising:
- forming a transistor having a gate;
- implanting a substance in said gate;
- and,
- annealing said transistor such that said implanted substance forms at least one void in said gate.
1 more element
A method of increasing the carrier mobility of an NMOS transistor, comprising:
- forming an NMOS transistor having a gate;
- implanting a gaseous substance in said gate;
- and,
- annealing said NMOS transistor such that said implanted gaseous substance forms at least one void in said gate.
1 more element
An apparatus comprising:
- an NMOS transistor, said transistor having a gate;
- and,
- at least one annealed void in said gate wherein said void creates a tensile stress region in said NMOS transistor such that NMOS transistor has an increased mobility.
Dependencies are inferred from the claim text.