H10D 30/4732
Using group iii-v semiconductor material
Official title: {using Group III-V semiconductor material}
H10D30/4732 (Using group iii-v semiconductor material) appears on 1,422 US grants and 1,420 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,422
- Published applications
- 1,420
- Assignees
- 374
- Inventors
- 2,065
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 0 | 0 |
| 1987 | 5 | 0 |
| 1988 | 8 | 0 |
| 1989 | 16 | 0 |
| 1990 | 7 | 0 |
| 1991 | 9 | 0 |
| 1992 | 17 | 0 |
| 1993 | 12 | 0 |
| 1994 | 17 | 0 |
| 1995 | 16 | 0 |
| 1996 | 18 | 0 |
| 1997 | 19 | 0 |
| 1998 | 25 | 0 |
| 1999 | 17 | 0 |
| 2000 | 18 | 0 |
| 2001 | 20 | 13 |
| 2002 | 22 | 25 |
| 2003 | 27 | 30 |
| 2004 | 16 | 23 |
| 2005 | 24 | 34 |
| 2006 | 17 | 54 |
| 2007 | 22 | 40 |
| 2008 | 24 | 39 |
| 2009 | 36 | 38 |
| 2010 | 35 | 46 |
| 2011 | 34 | 43 |
| 2012 | 41 | 39 |
| 2013 | 46 | 75 |
| 2014 | 73 | 90 |
| 2015 | 94 | 111 |
| 2016 | 109 | 91 |
| 2017 | 101 | 106 |
| 2018 | 72 | 60 |
| 2019 | 75 | 81 |
| 2020 | 63 | 89 |
| 2021 | 49 | 57 |
| 2022 | 55 | 71 |
| 2023 | 43 | 69 |
| 2024 | 48 | 45 |
| 2025 | 38 | 33 |
| 2026 | 26 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device8 Sep 2026US 12,733,238 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High electron mobility transistor with gate electrode below the channel11 Aug 2026US 12,707,667 B2International Business Machines Corporation
- Power semiconductor device comprising a wide bandgap substrate4 Aug 2026US 12,701,776 B2Cambridge Gan Devices Limited
- Semiconductor structures and manufacturing methods thereof21 Jul 2026US 12,690,218 B2Enkris Semiconductor, Inc.
- Transistor structure and methods of forming the same21 Jul 2026US 12,690,398 B2Massachusetts Institute of Technology
- Ohmic electrode for two-dimensional carrier gas (2dcg) semiconductor device8 Oct 2026US 2026/0314018 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Iii-n dual gate devices24 Sep 2026US 2026/0293180 A1
- High Power Super-Heterojunction High Electron Mobility Transistor and Method of Formation17 Sep 2026US 2026/0282514 A1The Penn State Research Foundation
- Gallium nitride semiconductor device and preparation method therefor13 Aug 2026US 2026/0239649 A1Csmc Technologies Fab2 Co., Ltd.
- Multi-channel high electron mobility transistor with reduced input capacitance13 Aug 2026US 2026/0239697 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Nitride based transistors on semi-insulating silicon carbide substrates334US 6,316,793 B1Cree, Inc. · 2001
- Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment265US 6,548,333 B2Cree, Inc. · 2003
- Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same238US 6,586,781 B2Cree Lighting Company · 2003
- Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer215US 6,849,882 B2Cree, Inc. · 2005
- Heterojunction field effect transistor204US 6,064,082 ASony Corporation · 2000