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AssigneeCree, Inc.
InventorsPrashant Chavarkar, Ioulia P. Smorchkova, Stacia Keller, Umesh Mishra, Wladyslaw Walukiewicz, Yifeng Wu
Estimating the term…
A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an AlyGa1−yN (y=1 or y 1) layer on the GaN buffer layer. An AlxGa1−xN (0≦x≦0.5) barrier layer on to the AlyGa1−yN layer, opposite the GaN buffer layer, AlyGa1−yN layer having a higher Al concentration than that of the AlxGa1−xN barrier layer. A preferred AlyGa1−yN layer has y=1 or y˜1 and a preferred AlxGa1−xN barrier layer has 0≦x≦0.5. A 2DEG forms at the interface between the GaN buffer layer and the AlyGa1−yN layer. Respective source, drain and gate contacts are formed on the AlxGa1−xN barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the AlyGa1−yN layer and a nucleation layer between the AlxGa1−xN buffer layer and the substrate.
A high electron mobility transistor (HEMT), comprising:
A group III nitride based high electron mobility transistor (HEMT), comprising:
A high electron mobility transistor (HEMT), comprising:
Dependencies are inferred from the claim text.