H10D 30/4738
Having multiple donor layers
Official title: {having multiple donor layers}
H10D30/4738 (Having multiple donor layers) appears on 250 US grants and 253 published applications in this corpus.
Search patents in H10D- Granted patents
- 250
- Published applications
- 253
- Assignees
- 115
- Inventors
- 535
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 6 |
| 2002 | 6 | 3 |
| 2003 | 7 | 7 |
| 2004 | 1 | 6 |
| 2005 | 12 | 12 |
| 2006 | 3 | 18 |
| 2007 | 12 | 11 |
| 2008 | 5 | 7 |
| 2009 | 7 | 9 |
| 2010 | 9 | 9 |
| 2011 | 7 | 8 |
| 2012 | 9 | 10 |
| 2013 | 8 | 18 |
| 2014 | 17 | 11 |
| 2015 | 22 | 15 |
| 2016 | 13 | 19 |
| 2017 | 19 | 9 |
| 2018 | 10 | 6 |
| 2019 | 9 | 17 |
| 2020 | 17 | 16 |
| 2021 | 8 | 9 |
| 2022 | 6 | 10 |
| 2023 | 5 | 11 |
| 2024 | 2 | 3 |
| 2025 | 7 | 1 |
| 2026 | 6 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Transistor structure and methods of forming the same21 Jul 2026US 12,690,398 B2Massachusetts Institute of Technology
- Superlattice structure with stress relaxation layers therein7 Jul 2026US 12,677,457 B2United Microelectronics Corp.
- Semiconductor structures9 Jun 2026US 12,652,839 B2Vanguard International Semiconductor Corporation
- Method for producing a semiconductor chip2 Jun 2026US 12,648,165 B2Imec Vzw
- Semiconductor device and method of manufacturing semiconductor device12 May 2026US 12,628,368 B2Mitsubishi Electric Corporation
- High Power Super-Heterojunction High Electron Mobility Transistor and Method of Formation17 Sep 2026US 2026/0282514 A1The Penn State Research Foundation
- Transistor structure and methods of forming the same11 Jun 2026US 2026/0165041 A1Massachusetts Institute of Technology
- N-polar iii-nitride device structures with a p-type layer16 Jan 2025US 2025/0022948 A1Monde Wireless Inc.
- Integrated devices with conductive barrier structure5 Dec 2024US 2024/0405024 A1Texas Instruments Incorporated
- Pseudomorphic high electron mobility transistor, low noise amplifier, and related apparatus3 Oct 2024US 2024/0332412 A1Huawei Technologies Co., Ltd.
Most cited
By later US patents
- Gate electrode formation in double-recessed transistor by two-step etching139US 6,573,129 B2Raytheon Company · 2003
- Double recessed transistor131US 6,797,994 B1Raytheon Company · 2004
- Enhancement mode metal-oxide-semiconductor field effect transistor128US 6,963,090 B2Freescale Semiconductor, Inc. · 2005
- Method for forming a microwave field effect transistor with high operating voltage104US 6,867,078 B1Freescale Semiconductor, Inc. · 2005
- Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same81US 7,321,132 B2Lockheed Martin Corporation · 2008