Enhancement mode metal-oxide-semiconductor field effect transistor
AssigneeFreescale Semiconductor, Inc.
InventorsMatthias Passlack, Olin L. Hartin, Marcus Ray, Nicholas Medendorp
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Abstract
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.
Claims13
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) comprising:
- a III-V compound semiconductor substrate;
- an epitaxial layer structure overlying said III-V compound semiconductor substrate, said epitaxial material layer comprising a channel layer and at least one doped layer;
- a gate oxide layer overlying said epitaxial layer structure;
- a metal gate electrode overlying said gate oxide layer;
- and
- source and drain ohmic contacts overlying said epitaxial layer structure;
- wherein said EMOSFET is without source and drain extension implants of the same dopant type as the at least one doped layer.
An enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) comprising:
- a III-V compound semiconductor substrate;
- an epitaxial layer structure overlying said III-V compound semiconductor substrate, said epitaxial layer structure comprising a channel layer and at least one delta-doped layer;
- a gate oxide layer overlying said epitaxial layer structure;
- a metal gate electrode overlying said gate oxide layer, said metal gate electrode having a work function;
- and
- source and drain ohmic contacts overlying said epitaxial layer structure;
- wherein said metal gate electrode is selected to have said work function and said delta-doped layer is doped to a level so that enhancement mode operation is achieved.
Dependencies are inferred from the claim text.