H10D 30/4735
Having delta-doped or planar-doped donor layers
Official title: {having delta-doped or planar-doped donor layers}
H10D30/4735 (Having delta-doped or planar-doped donor layers) appears on 235 US grants and 215 published applications in this corpus.
Search patents in H10D- Granted patents
- 235
- Published applications
- 215
- Assignees
- 96
- Inventors
- 444
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 6 | 5 |
| 2003 | 3 | 5 |
| 2004 | 3 | 7 |
| 2005 | 9 | 7 |
| 2006 | 3 | 8 |
| 2007 | 5 | 7 |
| 2008 | 2 | 9 |
| 2009 | 8 | 12 |
| 2010 | 5 | 8 |
| 2011 | 11 | 4 |
| 2012 | 8 | 6 |
| 2013 | 7 | 12 |
| 2014 | 10 | 17 |
| 2015 | 27 | 28 |
| 2016 | 28 | 27 |
| 2017 | 25 | 21 |
| 2018 | 21 | 10 |
| 2019 | 11 | 5 |
| 2020 | 6 | 2 |
| 2021 | 1 | 3 |
| 2022 | 2 | 0 |
| 2023 | 1 | 8 |
| 2024 | 1 | 2 |
| 2025 | 2 | 0 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for producing a semiconductor chip2 Jun 2026US 12,648,165 B2Imec Vzw
- Bonded semiconductor device and method for manufacturing bonded semiconductor device26 May 2026US 12,641,924 B2Shin-Etsu Handotai Co., Ltd.
- Doped aluminum-alloyed gallium oxide and ohmic contacts20 Jan 2026US 12,532,530 B2The Government of the United States of America, as represented by the Secretary of the Navy
- III-N based material structures, methods, devices and circuit modules based on strain management18 Feb 2025US 12,230,678 B2The Regents of the University of California
- Field-effect transistor and method for manufacturing the same21 Jan 2025US 12,206,014 B2Nippon Telegraph and Telephone Corporation
- High Power Super-Heterojunction High Electron Mobility Transistor and Method of Formation17 Sep 2026US 2026/0282514 A1The Penn State Research Foundation
- Layered semiconductor structures and methods for fabricating layered semiconductor structures18 Jun 2026US 2026/0173525 A1Nokia Networks France
- Pseudomorphic high electron mobility transistor, low noise amplifier, and related apparatus3 Oct 2024US 2024/0332412 A1Huawei Technologies Co., Ltd.
- Semiconductor Device15 Aug 2024US 2024/0274704 A1Nippon Telegraph and Telephone Corporation
- Method for Producing a Semiconductor Chip7 Dec 2023US 2023/0395561 A1Imec Vzw
Most cited
By later US patents
- Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same189US 7,919,791 B2Cree, Inc. · 2011
- Pseudomorphic HEMT having strained compensation layer170US 5,060,030 ARaytheon Company · 1991
- Enhancement mode metal-oxide-semiconductor field effect transistor128US 6,963,090 B2Freescale Semiconductor, Inc. · 2005
- Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereof116US 6,627,473 B1NEC Compound Semiconductor Devices, Ltd. · 2003
- Method for forming a microwave field effect transistor with high operating voltage104US 6,867,078 B1Freescale Semiconductor, Inc. · 2005