H10D 30/0321
Comprising silicon
Official title: {comprising silicon, e.g. amorphous silicon or polysilicon}
H10D30/0321 (Comprising silicon) appears on 8,013 US grants and 7,137 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,013
- Published applications
- 7,137
- Assignees
- 816
- Inventors
- 7,460
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 8 | 0 |
| 1988 | 6 | 0 |
| 1989 | 13 | 0 |
| 1990 | 12 | 0 |
| 1991 | 27 | 0 |
| 1992 | 44 | 0 |
| 1993 | 49 | 0 |
| 1994 | 82 | 0 |
| 1995 | 93 | 0 |
| 1996 | 121 | 0 |
| 1997 | 150 | 0 |
| 1998 | 194 | 0 |
| 1999 | 229 | 0 |
| 2000 | 234 | 0 |
| 2001 | 233 | 122 |
| 2002 | 330 | 412 |
| 2003 | 370 | 395 |
| 2004 | 360 | 442 |
| 2005 | 308 | 545 |
| 2006 | 361 | 437 |
| 2007 | 318 | 406 |
| 2008 | 318 | 358 |
| 2009 | 333 | 370 |
| 2010 | 360 | 278 |
| 2011 | 342 | 285 |
| 2012 | 289 | 281 |
| 2013 | 305 | 225 |
| 2014 | 243 | 230 |
| 2015 | 265 | 237 |
| 2016 | 239 | 312 |
| 2017 | 276 | 264 |
| 2018 | 246 | 295 |
| 2019 | 287 | 303 |
| 2020 | 243 | 224 |
| 2021 | 183 | 226 |
| 2022 | 156 | 145 |
| 2023 | 131 | 110 |
| 2024 | 111 | 127 |
| 2025 | 83 | 80 |
| 2026 | 43 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor1 Sep 2026US 12,727,201 B2Century Technology (Shenzhen) Corporation Limited
- Single process double gate and variable threshold voltage MOSFET25 Aug 2026US 12,720,793 B2International Business Machines Corporation
- Method for producing a microelectronic device25 Aug 2026US 12,721,068 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method of using semiconductor device and method of making18 Aug 2026US 12,713,681 B2Taiwan Semiconductor Manufacturing Company.Ltd
- SOI device structure for robust isolation4 Aug 2026US 12,701,754 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal oxide film, semiconductor device, and manufacturing method thereof8 Oct 2026US 2026/0313909 A1
- Thin film transistor1 Oct 2026US 2026/0304834 A1AUO Corporation
- Epi barrier aligned backside contact17 Sep 2026US 2026/0282472 A1Intel Foundry IP LLC
- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- Electronic device manufacturing method13 Aug 2026US 2026/0239688 A1STMicroelectronics (Crolles 2) SAS
Most cited
By later US patents
- MOSFET having a double gate1,461US 6,646,307 B1Advanced Micro Devices, Inc. · 2003
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Method for manufacturing a semiconductor device972US 5,923,962 ASemiconductor Energy Laboratory Co.Ltd. · 1999
- Method and apparatus to connect consumer to expert791US 6,223,165 B1Keen.com, Inc. · 2001
- Method for forming a film and method for manufacturing a thin film transistor649US 5,480,818 AFujitsu Limited · 1996