Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor

A method of manufacturing a thin film transistor (TFT), the method comprising:

• forming a gate electrode, and forming an insulating layer on the gate electrode;
• forming a first amorphous silicon (a-Si) layer on a side of the insulating layer away from the gate electrode;
• performing an excimer laser annealing (ELA) process on the first a-Si layer to obtain an annealed layer;
• and
• forming a second a-Si layer on a side of the annealed layer away from the insulating layer;
• wherein performing the ELA process further comprises determining an optimum energy density (OED) of the first a-Si layer, determining the OED of the first a-Si layer;
• and adjusting energy density of laser light;
• the method further comprises:
• acquiring an image of grains of the annealed layer after performing the ELA process;
• and in case that an average size of the grains is in a range of 100 nm to 180 nm, determining that energy density of laser light during the ELA process is at the OED;
• and
• confirming whether hydrogen explosion occurs during the ELA process;
• and in case that no hydrogen explosion during the ELA process has occurred is confirmed, determining that the energy density of the laser light is at the OED.