H10D 1/716
Having vertical extensions
Official title: {having vertical extensions}
H10D1/716 (Having vertical extensions) appears on 4,457 US grants and 4,997 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,457
- Published applications
- 4,997
- Assignees
- 485
- Inventors
- 6,103
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 4 | 0 |
| 1992 | 14 | 0 |
| 1993 | 17 | 0 |
| 1994 | 14 | 0 |
| 1995 | 23 | 0 |
| 1996 | 27 | 0 |
| 1997 | 32 | 0 |
| 1998 | 63 | 0 |
| 1999 | 78 | 0 |
| 2000 | 167 | 0 |
| 2001 | 204 | 90 |
| 2002 | 205 | 226 |
| 2003 | 207 | 218 |
| 2004 | 198 | 208 |
| 2005 | 127 | 201 |
| 2006 | 173 | 249 |
| 2007 | 134 | 152 |
| 2008 | 124 | 134 |
| 2009 | 111 | 122 |
| 2010 | 145 | 155 |
| 2011 | 106 | 119 |
| 2012 | 94 | 157 |
| 2013 | 125 | 164 |
| 2014 | 167 | 132 |
| 2015 | 152 | 139 |
| 2016 | 124 | 109 |
| 2017 | 111 | 93 |
| 2018 | 103 | 124 |
| 2019 | 126 | 134 |
| 2020 | 141 | 203 |
| 2021 | 158 | 205 |
| 2022 | 162 | 277 |
| 2023 | 179 | 400 |
| 2024 | 222 | 312 |
| 2025 | 268 | 353 |
| 2026 | 152 | 321 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor component with metal-insulator-metal capacitor assembly22 Sep 2026US 12,745,627 B2Imec Vzw
- High-density capacitive device having well-defined insulating areas15 Sep 2026US 12,738,427 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Integrated circuit device15 Sep 2026US 12,740,077 B2Samsung Electronics Co., Ltd.
- Integrated chips package structure with capacitor8 Oct 2026US 2026/0313919 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Concentric dtc bumps for high density package decap solution8 Oct 2026US 2026/0313924 A1QUALCOMM Incorporated
- A Multi-Layer Deep-Trench Capacitor8 Oct 2026US 2026/0313925 A1Lotus Microsystems Aps
- Package structure and method for forming the same8 Oct 2026US 2026/0314394 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with advanced pad structure and method for forming same1 Oct 2026US 2026/0302085 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material509US 7,201,943 B2Samsung Electronics Co., Ltd. · 2007
- Method to form a capacitor having multiple pillars for advanced DRAMS399US 5,650,351 AVanguard International Semiconductor Corporation · 1997
- Capacitor structure for an integrated circuit396US 5,583,359 ANorthern Telecom Limited · 1996
- Integrated capacitor bottom electrode for use with conformal dielectric382US 5,754,390 AMicron Technology, Inc. · 1998