High-density capacitive device having well-defined insulating areas

A method for manufacturing a capacitive device comprising the following steps:

• i) providing a substrate comprising:
• a first area made of a first material and/or having a first texture,
• a second area made of a second material and/or having a second texture,
• a third area arranged between said first area and said second area, the third area being made of a third material and/or having a third texture, the first material being different from the third material and/or the first texture being different from the third texture,
• ii) making nanopillars grow over the substrate, with which a nanopillar layer is obtained locally having different densities, the nanopillars at the first area having a first density, the nanopillars at the second area having a second density, the nanopillars at the third area having a third density, the first density and the second density being lower than the third density,
• iii) forming an insulating layer over the nanopillar layer, the insulating layer covering the nanopillars in a conformal and continuous manner,
• iv) forming a conductive layer, over the nanopillar layer, so that the conductive layer covering the insulating layer in a conformal and continuous manner at the first area, a capacitive stack being formed at the first area, the capacitive stack comprising the insulating layer and the conductive layer, the conductive layer not being deposited between the nanopillars at the third area, thereby defining an electrically insulating area between the first area and the second area.

A method for manufacturing a capacitive device, comprising:

• i) providing a substrate comprising at least a first region and an adjacent second region;
• ii) growing a nanopillar layer over the substrate, such that:
• the first region comprises nanopillars having a first density, and
• the second region comprises nanopillars having a second density higher than the first density;
• iii) depositing an insulating layer conformally over the nanopillar layer, wherein the insulating layer covers the nanopillars in both the first and second regions, and substantially fills the spaces between the nanopillars in the second region;
• and
• iv) depositing a conductive layer over the insulating layer, wherein:
• the conductive layer covers the insulating layer in the first region in a conformal and continuous manner, forming a capacitive stack comprising the insulating layer and the conductive layer in the first region, and
• wherein deposition of the conductive layer is substantially prevented in the second region due to the insulating layer filling the spaces between the nanopillars, such that the second region remains electrically insulating.