Logic device and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsWon Ji Park, Sunoo Kim, Jaehee Oh, Hyungwon Kim, WooSeong Jang, Taekyung Kim, Youngbin Hyun
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AssigneeSamsung Electronics Co., Ltd.
InventorsWon Ji Park, Sunoo Kim, Jaehee Oh, Hyungwon Kim, WooSeong Jang, Taekyung Kim, Youngbin Hyun
Estimating the term…
A logic device includes a substrate; at least one first insulating layer on the substrate; a second insulating layer on the at least one first insulating layer; and a capacitor portion in the at least one first insulating layer and the second insulating layer, wherein the at least one first insulating layer includes a plurality of through-holes, the capacitor portion includes a capacitor structure including a lower electrode, a dielectric film, and an upper electrode, and the capacitor structure continuously extends along the inside of the plurality of through-holes and along an upper surface of the at least one first insulating layer around the plurality of through-holes.
A logic device, comprising:
A logic device, comprising:
A manufacturing method of a logic device, the method comprising:
Dependencies are inferred from the claim text.