Semiconductor device with advanced pad structure and method for forming same

A semiconductor device, comprising:

• a substrate having a trench;
• a stack of alternating conductive layers and dielectric layers disposed in the trench;
• a dielectric layer over the stack;
• conductive vias extending through the dielectric layer and contacting the conductive layers;
• one or more metallization layers over the dielectric layer, wherein the conductive vias are electrically isolated from each other through the one or more metallization layers;
• a passivation layer over the one or more metallization layers;
• and
• a plurality of contact pads embedded in the passivation layer, wherein each of the contact pads electrically connects two or more of the conductive vias.

A semiconductor device, comprising:

• a semiconductor die including:
• a substrate,
• a deep trench capacitor (DTC) in the substrate, the DTC including a plurality of first electrodes of a first polarity and a plurality of second electrodes of a second polarity,
• an interconnect structure over the DTC, the interconnect structure including conductive paths electrically isolated from each other within the interconnect structure and electrically coupling the first electrodes and the second electrodes to a top surface of the interconnect structure, and
• a first contact pad and a second contact pad over the top surface of the interconnect structure and electrically connecting the first electrodes and the second electrodes, respectively;
• and
• an interposer bonded to the semiconductor die, the interposer including:
• an interposer substrate,
• a plurality of first interposer contact pads and a plurality of second interposer contact pads on opposite sides of the interposer substrate, and
• metallization layers within the interposer substrate electrically connecting at least some of the first interposer contact pads to at least some of the second interposer contact pads, wherein the first contact pad and the second contact pad of the semiconductor die are electrically connected to the first interposer contact pads.