Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-Sung Park, Jeong-Hee Chung, Jae-Hyun Yeo
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Abstract
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.
Claims33
A method of forming a thin film layer through an atomic layer deposition process, comprising:
- introducing a first reacting material including a tantalum precursor and a titanium precursor to a substrate to chemisorb a portion of the first reacting material onto the substrate;
- and
- introducing a second reacting material including oxygen to the substrate to chemisorb a portion of the second reacting materials onto the substrate and to form a solid material thereon.
A method of forming a capacitor of a semiconductor device, comprising:
- forming a lower electrode of the capacitor on a substrate;
- forming a dielectric layer of the capacitor including titanium tantalum oxide on the substrate by discontinuously introducing a first reacting material, a second reacting material, and a purge gas onto the lower electrode, chemisorbing a portion of the first reacting material and the second reacting material onto the substrate, and purging at least some non-chemisorbed first and second reacting materials from the substrate, wherein the first reacting material includes a tantalum precursor and a titanium precursor, and the second reacting material includes oxygen;
- and
- forming an upper electrode of the capacitor on the dielectric layer.
A method of forming a transistor, comprising:
- forming a gate dielectric layer of the transistor including tantalum titanium oxide on a substrate by discontinuously introducing a first reacting material, a second reacting material, and a purge gas onto the substrate, chemisorbing a portion of the first reacting material and the second reacting material onto the substrate, and purging at least some non-chemisorbed first and second reacting materials from the substrate, wherein the first reacting material includes a tantalum precursor and a titanium precursor and the second reacting material includes oxygen;
- forming a gate electrode on the gate dielectric layer;
- and
- forming source and drain regions in the substrate.
Dependencies are inferred from the claim text.