H10D 1/665
Trench conductor-insulator-semiconductor capacitors
Official title: {Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors}
H10D1/665 (Trench conductor-insulator-semiconductor capacitors) appears on 894 US grants and 985 published applications in this corpus.
Search patents in H10D- Granted patents
- 894
- Published applications
- 985
- Assignees
- 197
- Inventors
- 1,565
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 10 | 0 |
| 1988 | 6 | 0 |
| 1989 | 12 | 0 |
| 1990 | 11 | 0 |
| 1991 | 12 | 0 |
| 1992 | 6 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 3 | 0 |
| 1996 | 5 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 7 | 0 |
| 2001 | 14 | 3 |
| 2002 | 15 | 19 |
| 2003 | 22 | 26 |
| 2004 | 32 | 41 |
| 2005 | 33 | 54 |
| 2006 | 36 | 42 |
| 2007 | 25 | 42 |
| 2008 | 21 | 40 |
| 2009 | 21 | 20 |
| 2010 | 24 | 24 |
| 2011 | 23 | 19 |
| 2012 | 26 | 34 |
| 2013 | 32 | 52 |
| 2014 | 48 | 35 |
| 2015 | 41 | 39 |
| 2016 | 40 | 39 |
| 2017 | 30 | 28 |
| 2018 | 29 | 29 |
| 2019 | 31 | 32 |
| 2020 | 28 | 43 |
| 2021 | 46 | 51 |
| 2022 | 27 | 42 |
| 2023 | 41 | 61 |
| 2024 | 46 | 53 |
| 2025 | 37 | 70 |
| 2026 | 26 | 47 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal-oxide-semiconductor capacitor structure6 Oct 2026US 12,757,416 B2United Microelectronics Corp.
- Trench capacitor in backside diffusion break1 Sep 2026US 12,727,179 B2International Business Machines Corporation
- Semiconductor package structure and method for manufacturing the same25 Aug 2026US 12,721,137 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and method for deep trench capacitor with reduced deformation11 Aug 2026US 12,707,655 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, manufacturing method thereof, and 3D NAND memory4 Aug 2026US 12,701,725 B2Yangtze Memory Technologies Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Capacitor integrated passive device with common grounded through-substrate-via and substrate backside conductor and methods of forming the same8 Oct 2026US 2026/0314447 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor-based capacitor with vertical and lateral capacitive junctions1 Oct 2026US 2026/0304798 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and methods of formation1 Oct 2026US 2026/0304799 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Patterned SOI regions in semiconductor chips183US 6,333,532 B1International Business Machines Corporation · 2001
- Porous silicon trench and capacitor structures134US 5,508,542 AInternational Business Machines Corporation · 1996
- Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods111US 7,811,881 B2International Business Machines Corporation · 2010
- MOS dynamic ram103US 4,630,088 AKabushiki Kaisha Toshiba · 1986
- Semiconductor memory device with trench surrounding each memory cell101US 4,672,410 ANippon Telegraph and Telephone Corporation · 1987