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AssigneeInternational Business Machines Corporation
InventorsReinaldo Vega, Ruilong Xie, Nicholas Anthony Lanzillo, Takashi Ando, David Wolpert, James P Mazza
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A first source drain region directly adjacent to a first nanosheet stack, a second source drain region directly adjacent to a second nanosheet stack, an inner electrode of a capacitor between the first source drain region and the second source drain region and a non-conducting layer sandwiched between the inner electrode and the first source drain region. A first source drain region directly adjacent to a first nanosheet stack, a second source drain region directly adjacent to a second nanosheet stack, an inner electrode of a capacitor between the first source drain region and the second source drain region, a first liner sandwiched between the inner electrode and the first source drain region, and a second liner sandwiched between the inner electrode and the second source drain region.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.