H10D 1/66
Conductor-insulator-semiconductor capacitors
Official title: Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
H10D1/66 (Conductor-insulator-semiconductor capacitors) appears on 1,926 US grants and 2,061 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,926
- Published applications
- 2,061
- Assignees
- 453
- Inventors
- 3,561
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 7 | 0 |
| 1978 | 4 | 0 |
| 1979 | 3 | 0 |
| 1980 | 5 | 0 |
| 1981 | 8 | 0 |
| 1982 | 4 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 1 | 0 |
| 1986 | 7 | 0 |
| 1987 | 12 | 0 |
| 1988 | 11 | 0 |
| 1989 | 17 | 0 |
| 1990 | 17 | 0 |
| 1991 | 19 | 0 |
| 1992 | 13 | 0 |
| 1993 | 11 | 0 |
| 1994 | 14 | 0 |
| 1995 | 5 | 0 |
| 1996 | 14 | 0 |
| 1997 | 9 | 0 |
| 1998 | 17 | 0 |
| 1999 | 15 | 0 |
| 2000 | 20 | 0 |
| 2001 | 37 | 19 |
| 2002 | 34 | 40 |
| 2003 | 51 | 55 |
| 2004 | 60 | 65 |
| 2005 | 57 | 102 |
| 2006 | 59 | 76 |
| 2007 | 43 | 83 |
| 2008 | 43 | 75 |
| 2009 | 48 | 56 |
| 2010 | 58 | 54 |
| 2011 | 52 | 56 |
| 2012 | 44 | 79 |
| 2013 | 82 | 120 |
| 2014 | 107 | 99 |
| 2015 | 94 | 87 |
| 2016 | 101 | 93 |
| 2017 | 80 | 65 |
| 2018 | 70 | 80 |
| 2019 | 79 | 79 |
| 2020 | 80 | 85 |
| 2021 | 75 | 94 |
| 2022 | 53 | 81 |
| 2023 | 78 | 111 |
| 2024 | 71 | 95 |
| 2025 | 77 | 122 |
| 2026 | 48 | 90 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Metal-oxide-semiconductor capacitor structure6 Oct 2026US 12,757,416 B2United Microelectronics Corp.
- Structural element with improved ferroelectric polarisation switching and reliability and method for producing said structural element22 Sep 2026US 12,745,447 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Trench capacitor in backside diffusion break1 Sep 2026US 12,727,179 B2International Business Machines Corporation
- Decoupling integrated circuit1 Sep 2026US 12,727,473 B2Samsung Electronics Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Capacitor integrated passive device with common grounded through-substrate-via and substrate backside conductor and methods of forming the same8 Oct 2026US 2026/0314447 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304795 A1United Microelectronics Corp.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304796 A1United Microelectronics Corp.
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Methods of forming capacitors, DRAM arrays, and monolithic integrated circuits254US 6,306,705 B1Micron Technology, Inc. · 2001
- High-density three-dimensional memory cell240US 6,952,030 B2Matrix Semiconductor, Inc. · 2005
- Patterned SOI regions in semiconductor chips183US 6,333,532 B1International Business Machines Corporation · 2001
- Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer174US 5,572,052 AMitsubishi Denki Kabushiki Kaisha · 1996
- Porous silicon trench and capacitor structures134US 5,508,542 AInternational Business Machines Corporation · 1996