Capacitor integrated passive device with common grounded through-substrate-via and substrate backside conductor and methods of forming the same

A semiconductor package structure, comprising:

• an interposer;
• a package substrate;
• and
• an integrated passive device (IPD) sandwiched therebetween, and electrically connected to, the interposer and the package substrate,
• wherein the IPD comprises:
• an IPD substrate;
• a deep trench capacitor formed within the IPD substrate;
• and
• an electrically conducting through-substrate-via formed within the IPD substrate and extending from a first side of the IPD substrate to a second side of the IPD substrate such that the through-substrate-via is electrically connected to the deep trench capacitor on the first side of the IPD substrate and is electrically connected to the package substrate on the second side of the IPD substrate.

A method of forming an integrated passive device, comprising:

• forming a deep trench capacitor in a substrate, wherein the deep trench capacitor comprises one or more power terminals and one or more ground terminals;
• forming electrical interconnect structures on a first side of the substrate, wherein the electrical interconnect structures comprise first interconnects connected to the one or more power terminals and second interconnects connected to the one or more ground terminals;
• forming an electrically conducting through-substrate-via within the substrate such that the through-substrate-via extends from the first side of the substrate to a second side of the substrate;
• and
• coupling the through-substrate-via to the second interconnects on the first side of the substrate.