H10B 99/20
Comprising memory cells having thyristors
Official title: {comprising memory cells having thyristors}
H10B99/20 (Comprising memory cells having thyristors) appears on 74 US grants and 58 published applications in this corpus.
Search patents in H10B- Granted patents
- 74
- Published applications
- 58
- Assignees
- 22
- Inventors
- 67
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 4 |
| 2003 | 2 | 0 |
| 2004 | 1 | 2 |
| 2005 | 1 | 2 |
| 2006 | 4 | 0 |
| 2007 | 4 | 3 |
| 2008 | 6 | 3 |
| 2009 | 4 | 3 |
| 2010 | 4 | 1 |
| 2011 | 8 | 3 |
| 2012 | 4 | 3 |
| 2013 | 5 | 6 |
| 2014 | 2 | 2 |
| 2015 | 5 | 3 |
| 2016 | 4 | 2 |
| 2017 | 3 | 1 |
| 2018 | 1 | 1 |
| 2019 | 1 | 2 |
| 2020 | 1 | 3 |
| 2021 | 3 | 3 |
| 2022 | 0 | 0 |
| 2023 | 2 | 2 |
| 2024 | 1 | 4 |
| 2025 | 3 | 3 |
| 2026 | 5 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory array21 Jul 2026US 12,688,881 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-layer random access memory and methods of manufacture14 Jul 2026US 12,684,757 B2TC Lab, Inc.
- Semiconductor device including memory cell including thyristor and method of manufacturing the same5 May 2026US 12,622,002 B2SK hynix Inc.
- Three-dimensional memory and operating method thereof31 Mar 2026US 12,592,284 B2Macronix International Co., Ltd.
- Memory device based on thyristors17 Mar 2026US 12,581,666 B2Macronix International Co., Ltd.
- Semiconductor device including memory cell including thyristor and method of manufacturing the same13 Aug 2026US 2026/0239632 A1SK hynix Inc.
- Three-dimensional memory and operating method thereof19 Feb 2026US 2026/0051352 A1Macronix International Co., Ltd.
- Semiconductor device and method for manufacturing the same22 May 2025US 2025/0169053 A1SK hynix Inc.
- Formation of Stacked Lateral Semiconductor Devices and the Resulting Structures17 Apr 2025US 2025/0125146 A1TC Lab, Inc.
- Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory array9 Jan 2025US 2025/0014627 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical thyristor-based memory with trench isolation and its method of fabrication147US 7,456,439 B1T-RAM Semiconductor, Inc. · 2008
- T-Ram array having a planar cell structure and method for fabricating the same141US 6,552,398 B2IBM Corporation · 2003
- Gated lateral thyristor-based random access memory cell (GLTRAM)42US 7,042,027 B2Micron Technology, Inc. · 2006
- Reduction of charge leakage from a thyristor-based memory cell40US 7,786,505 B1T-RAM Semiconductor, Inc. · 2010
- Memory system capable of operating at high temperatures and method for fabricating the same39US 6,627,924 B2IBM Corporation · 2003