Memory device based on thyristors

A memory device based on thyristors, comprising:

• a plurality of gate structures, each extending in a first direction, and each of the gate structures is a continuous structure in the first direction;
• a plurality of bit lines, each extending in a second direction, the second direction is substantially orthogonal to the first direction;
• a plurality of source lines, each extending in the first direction;
• a plurality of channels, each extending in a third direction and penetrating each of the gate structures, the third direction is substantially perpendicular to the first direction and the second direction, a first doped region of each channel is coupled to a corresponding one of the bit lines, and a second doped region of each channel is coupled to a corresponding one of the source lines;
• and
• a plurality of memory units, each formed by the gate structures and a corresponding one of the channels,
• wherein, the gate structures are sequentially arranged according to the third direction, the bit lines are sequentially arranged according to the first direction, the source lines are sequentially arranged according to the second direction to form a stair structure, and the lengths of the source lines in the first direction are sequentially decreased.