Memory system capable of operating at high temperatures and method for fabricating the same
AssigneeIBM Corporation
InventorsLouis L. Hsu, Li-Kong Wang
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Abstract
A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each thyristor is coplanar with the top surface of each transfer gate within the T-RAM array to provide a planar cell structure for the T-RAM array. A method is also presented for fabricating the T-RAM array having the vertical thyristors, the vertical transfer gates and the planar cell structure over the SiC substrate.
Claims18
A memory system comprising a plurality of T-RAM memory cells arranged in an array and fabricated over a silicon carbide (SiC) substrate, wherein each of the plurality of T-RAM memory cells includes a first and a second vertical device, said first and second vertical device being approximately the same height.
A T-RAM array comprising a plurality of T-RAM memory cells fabricated over a silicon carbide (SiC) substrate, wherein each of the plurality of T-RAM memory cells includes a first and a second vertical device, said first and second vertical device being approximately the same height.
Dependencies are inferred from the claim text.