H10B 43/27
The channels comprising vertical portions
Official title: the channels comprising vertical portions, e.g. U-shaped channels
H10B43/27 (The channels comprising vertical portions) appears on 9,789 US grants and 13,099 published applications in this corpus.
Search patents in H10B- Granted patents
- 9,789
- Published applications
- 13,099
- Assignees
- 307
- Inventors
- 7,753
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 2 |
| 2004 | 0 | 4 |
| 2005 | 2 | 1 |
| 2006 | 3 | 4 |
| 2007 | 1 | 3 |
| 2008 | 1 | 12 |
| 2009 | 4 | 43 |
| 2010 | 13 | 96 |
| 2011 | 51 | 125 |
| 2012 | 94 | 217 |
| 2013 | 170 | 267 |
| 2014 | 288 | 335 |
| 2015 | 385 | 471 |
| 2016 | 543 | 620 |
| 2017 | 643 | 748 |
| 2018 | 572 | 583 |
| 2019 | 659 | 839 |
| 2020 | 923 | 1161 |
| 2021 | 943 | 1344 |
| 2022 | 886 | 1399 |
| 2023 | 929 | 1345 |
| 2024 | 1054 | 1350 |
| 2025 | 967 | 1183 |
| 2026 | 658 | 946 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Memory device and method for manufacturing the same8 Oct 2026US 2026/0311729 A1Macronix International Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
Most cited
By later US patents
- Vertical-type non-volatile memory devices657US 7,679,133 B2Samsung Electronics Co., Ltd. · 2010
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Non-volatile memory device, erasing method thereof, and memory system including the same608US 8,553,466 B2Samsung Electronics Co., Ltd. · 2013
- Methods for depositing silicon oxide501US 9,685,320 B2Lam Research Corporation · 2017
- Integrated circuits having a contact region and methods for manufacturing the same490US 7,915,667 B2Qimonda AG · 2011