H01J 37/32899
Multiple chambers
Official title: {Multiple chambers, e.g. cluster tools}
H01J37/32899 (Multiple chambers) appears on 389 US grants and 654 published applications in this corpus.
Search patents in H01J- Granted patents
- 389
- Published applications
- 654
- Assignees
- 143
- Inventors
- 1,439
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 12 |
| 2012 | 2 | 14 |
| 2013 | 4 | 18 |
| 2014 | 11 | 26 |
| 2015 | 11 | 42 |
| 2016 | 24 | 50 |
| 2017 | 28 | 51 |
| 2018 | 34 | 42 |
| 2019 | 36 | 48 |
| 2020 | 37 | 50 |
| 2021 | 26 | 41 |
| 2022 | 33 | 58 |
| 2023 | 30 | 58 |
| 2024 | 39 | 56 |
| 2025 | 44 | 46 |
| 2026 | 28 | 40 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Substrate processing method and plasma processing apparatus8 Sep 2026US 12,731,764 B2Tokyo Electron Limited
- Higher pressure purge for impurity reduction in radical treatment chamber8 Sep 2026US 12,731,769 B2APPLIED Materials.Inc.
- Surface treatment apparatus and surface treatment method11 Aug 2026US 12,703,908 B2Shibaura Machine Co., Ltd.
- Data collection system, data collection apparatus, data collection method, and data collection program11 Aug 2026US 12,707,926 B2Tokyo Electron Limited
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same14 Jul 2026US 12,680,168 B2ASM IP Holding B. V.
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Higher pressure purge for impurity reduction in radical treatment chamber1 Oct 2026US 2026/0302143 A1APPLIED Materials.Inc.
- High-performance adaptable sampling system1 Oct 2026US 2026/0302145 A1Tokyo Electron Limited
- Deposition system with integrated carrier cleaning modules17 Sep 2026US 2026/0275502 A1Veeco Instruments Inc.
- Methods for inhibiting precursor interactions during radical-enhanced atomic layer deposition17 Sep 2026US 2026/0275519 A1Lotus Applied Technology, LLC
Most cited
By later US patents
- Methods and apparatus for atomic layer etching577US 8,617,411 B2Lam Research Corporation · 2013
- Methods for processing substrates in process systems having shared resources523US 8,496,756 B2APPLIED Materials.Inc. · 2013
- Technique to deposit sidewall passivation for high aspect ratio cylinder etch440US 9,997,373 B2Lam Research Corporation · 2018
- Multi-zone reactor, system including the reactor, and method of using the same418US 10,276,355 B2ASM IP Holding B. V. · 2019
- Oxide etch selectivity systems and methods153US 9,349,605 B1APPLIED Materials.Inc. · 2016