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US 12,731,764 B2Granted
Substrate processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTakuma Sato, Shota Yoshimura, Motoki Noro, Hsinkai Wang, Kota Oikawa
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Abstract
A substrate processing method includes: (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material; (b) etching the second region while forming a metal-containing layer on the first region, by a plasma generated from a processing gas including halogen and metal; (c) removing the metal-containing layer with a base.
Claims17
A substrate processing method comprising:
- (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material;
- (b) etching the second region while forming a metal-containing layer on the first region, by a plasma generated from a processing gas including halogen and metal;
- (c) removing the metal-containing layer with a base.
A substrate processing method comprising:
- (a) providing a substrate including a silicon-containing region with a recess and a metal-containing layer formed on the silicon-containing region, the metal-containing layer including halogen;
- and
- (b) removing the metal-containing layer by a plasma generated from a processing gas including an oxygen-containing gas.
Dependencies are inferred from the claim text.