G11C 8/14
Word line organisation
Official title: Word line organisation; Word line lay-out
G11C8/14 (Word line organisation) appears on 1,671 US grants and 1,552 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,671
- Published applications
- 1,552
- Assignees
- 279
- Inventors
- 2,488
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 4 | 0 |
| 1987 | 7 | 0 |
| 1988 | 7 | 0 |
| 1989 | 5 | 0 |
| 1990 | 4 | 0 |
| 1991 | 5 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 9 | 0 |
| 1995 | 14 | 0 |
| 1996 | 4 | 0 |
| 1997 | 14 | 0 |
| 1998 | 43 | 0 |
| 1999 | 50 | 0 |
| 2000 | 46 | 0 |
| 2001 | 29 | 11 |
| 2002 | 26 | 42 |
| 2003 | 26 | 15 |
| 2004 | 29 | 28 |
| 2005 | 18 | 20 |
| 2006 | 19 | 24 |
| 2007 | 19 | 24 |
| 2008 | 24 | 42 |
| 2009 | 29 | 60 |
| 2010 | 34 | 41 |
| 2011 | 52 | 39 |
| 2012 | 40 | 55 |
| 2013 | 52 | 45 |
| 2014 | 60 | 34 |
| 2015 | 44 | 49 |
| 2016 | 71 | 67 |
| 2017 | 64 | 33 |
| 2018 | 48 | 61 |
| 2019 | 78 | 105 |
| 2020 | 119 | 113 |
| 2021 | 96 | 130 |
| 2022 | 102 | 152 |
| 2023 | 120 | 132 |
| 2024 | 108 | 92 |
| 2025 | 86 | 80 |
| 2026 | 50 | 58 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Storage apparatus including word line grouping device and operating method thereof25 Aug 2026US 12,718,894 B2SK hynix Inc.
- Semiconductor memory structure25 Aug 2026US 12,720,736 B2Invention And Collaboration Laboratory Pte. Ltd.
- Three dimensional flash memory with bulk erasing25 Aug 2026US 12,720,752 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Vertical memory device with a double word line structure18 Aug 2026US 12,712,014 B2SK hynix Inc.
- Nonvolatile memory device18 Aug 2026US 12,713,603 B2Samsung Electronics Co., Ltd.
- Memory device8 Oct 2026US 2026/0311733 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices and operating methods thereof, memory systems, word line voltage control circuits17 Sep 2026US 2026/0279447 A1Yangtze Memory Technologies Co., Ltd.
- Memory core circuit having cell on periphery (cop) structure and memory device including the same27 Aug 2026US 2026/0253632 A1Samsung Electronics Co., Ltd.
- Memory device and manufacturing method thereof20 Aug 2026US 2026/0245600 A1Samsung Electronics Co., Ltd.
- Memory devices and microelectronic devices20 Aug 2026US 2026/0245612 A1Micron Technology, Inc.
Most cited
By later US patents
- Dynamic semiconductor memory device of a twisted bit line system having improved reliability of readout442US 4,977,542 AMitsubishi Denki Kabushiki Kaisha · 1990
- Scannable sense amplifier circuit421US 5,915,084 AAdvanced Micro Devices, Inc. · 1999
- Non-volatile semiconductor storage device262US 8,008,710 B2Kabushiki Kaisha Toshiba · 2011
- Method and system for providing a magnetic memory structure utilizing spin transfer142US 7,345,912 B2Grandis, Inc. · 2008
- Bit-refreshable method and circuit for refreshing a nonvolatile flash memory137US 5,768,193 AAplus Integrated Circuits, Inc. · 1998