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US 12,718,894 B2Granted
Storage apparatus including word line grouping device and operating method thereof
AssigneeSK hynix Inc.
InventorsJae Yong Son, Woo Suk Kwak
Life of this patent
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Abstract
A storage apparatus includes a memory device including a plurality of word lines; and a word line grouping device configured to group the plurality of word lines into a certain number of groups each serving as a memory block so that a read performance value, obtained by reading data of word lines included in a same group by using a representative read voltage, is satisfied with a set tolerance value.
Claims14
A storage apparatus comprising:
- a memory device including a plurality of word lines;
- and
- a word line grouping device configured to group the plurality of word lines into a certain number of groups, so that a read performance value, obtained by reading data of word lines included in a same group by using a representative read voltage, is satisfied with a set tolerance value,
- wherein the read performance value includes a read pass rate which is a ratio of a word line number having a fail bit count within error correction capability to a total word line number of each group for a plurality of candidate read voltages when data of the word lines in each group are read by using at least a portion of the plurality of candidate read voltages.
1 more element
An operating method of a storage apparatus which includes a memory device including a plurality of word lines;
- and a storage controller configured to control the memory device, the method comprising:
- the storage controller grouping a plurality of word lines into a certain number of groups;
- and
- the storage controller regrouping the plurality of word lines so that a read performance value obtained by reading data of word lines included in a same group by using a representative read voltage, is satisfied with a set tolerance value,
- wherein the read performance value is determined to include a read pass rate which is a ratio of a word line number having a fail bit count within error correction capability to a total word line number in each group for a plurality of candidate read voltages when data of the word lines in each group are read by using at least a portion of the plurality of candidate read voltages.
2 more elements
Dependencies are inferred from the claim text.